ʻO ke kuleana o ka sulfur hexafluoride i loko o ke kalaiwa nitride silika

ʻO ka Sulfur hexafluoride he kinoea me nā waiwai insulating maikaʻi loa a hoʻohana pinepine ʻia i ka hoʻopau ʻana i nā arc kiʻekiʻe a me nā transformers, nā laina hoʻoili uila kiʻekiʻe, nā transformers, a me nā mea ʻē aʻe. .Hexafluoride sulfur maʻemaʻe kiʻekiʻe kiʻekiʻe ʻeleʻele he etchant uila maikaʻi loa, i hoʻohana nui ʻia i ka ʻenehana microelectronics.I kēia lā, ʻo Niu Ruide ka mea hoʻoponopono kinoea kūikawā ʻo Yueyue e hoʻolauna i ka hoʻohana ʻana i ka sulfur hexafluoride i loko o ka silicon nitride etching a me ka mana o nā ʻāpana like ʻole.

Kūkākūkā mākou i ka SF6 plasma etching SiNx kaʻina, me ka hoʻololi ʻana i ka mana plasma, ka lākiō kinoea o SF6/He a me ka hoʻohui ʻana i ke kinoea cationic O2, e kūkākūkā ana i kona mana i ka etching rate o ka SiNx element protection layer o TFT, a me ka hoʻohana ʻana i ka radiation plasma. Hoʻopili ka spectrometer i nā loli o kēlā me kēia ʻano ma SF6/He, SF6/He/O2 plasma a me ka SF6 dissociation rate, a ʻimi i ka pilina ma waena o ka hoʻololi ʻana o SiNx etching rate a me ka ʻano ʻano plasma.

Ua ʻike nā haʻawina i ka wā e hoʻonui ʻia ai ka mana plasma, piʻi ka nui o ka etching;inā hoʻonui ʻia ka kahe kahe o SF6 i loko o ka plasma, piʻi ka F atom ka hoʻonui ʻia a hoʻopili maikaʻi ʻia me ka helu etching.Eia kekahi, ma hope o ka hoʻohui ʻana i ke kinoea cationic O2 ma lalo o ka huina holo holo paʻa, e loaʻa iā ia ka hopena o ka hoʻonui ʻana i ka helu etching, akā ma lalo o nā ʻano kahe o O2 / SF6, aia nā ʻano hana like ʻole, hiki ke māhele ʻia i ʻekolu ʻāpana. : (1) He liʻiliʻi loa ka ratio kahe o O2/SF6, hiki iā O2 ke kōkua i ka dissociation o SF6, a ʻoi aku ka nui o ka etching rate i kēia manawa ma mua o ka hoʻohui ʻole ʻia ʻana o O2.(2) Keʻoi aku ka nui o ka lakene kahe O2/SF6 ma mua o 0.2 a hiki i ka wā e hoʻokokoke ana i ka 1, i kēia manawa, ma muli o ka nui o ka dissociation o SF6 e hana i nā atom F, ʻo ka helu etching ka mea kiʻekiʻe loa;akā i ka manawa like, ke piʻi aʻe nei nā ʻātoma O i loko o ka plasma a ua maʻalahi ke hana ʻana i SiOx a i ʻole SiNxO(yx) me ka ʻili kiʻiʻoniʻoni SiNx, a ʻoi aku ka nui o nā atom O, ʻoi aku ka paʻakikī o nā ʻātoma F no ka hoʻohenehene etching.No laila, hoʻomaka ka lohi o ka etching i ka wā e kokoke ana ka lākiō O2/SF6 i ka 1. (3) Ke ʻoi aku ka nui o ka lākiō O2/SF6 ma mua o 1, e emi ana ka helu etching.Ma muli o ka piʻi nui ʻana o ka O2, hui pū nā ʻātoma F i hoʻokaʻawale ʻia me O2 a me ke ʻano OF, kahi e hōʻemi ai i ka ʻike o nā mana F, e hopena i ka emi ʻana o ka helu etching.Hiki ke ʻike ʻia mai kēia, ke hoʻohui ʻia ʻo O2, aia ka ratio kahe o O2/SF6 ma waena o 0.2 a me 0.8, a hiki ke loaʻa ka helu etching maikaʻi loa.


Ka manawa hoʻouna: Dec-06-2021