ʻO ka Sulfur hexafluoride he kinoea me nā waiwai insulating maikaʻi loa a hoʻohana pinepineʻia i ka hoʻopauʻana i nā arc kiʻekiʻe a me nā mea hoʻololi, nā laina hoʻoili uila kiʻekiʻe, nā transformers, a me nā mea'ē aʻe. Hexafluoride sulfur maʻemaʻe kiʻekiʻe kiʻekiʻe ʻeleʻele he etchant uila maikaʻi loa, i hoʻohana nui ʻia i ka ʻenehana microelectronics. I kēia lā, ʻo Niu Ruide ka mea hoʻoponopono kinoea kūikawā ʻo Yueyue e hoʻolauna i ka hoʻohana ʻana i ka sulfur hexafluoride i loko o ka silicon nitride etching a me ka mana o nā ʻāpana like ʻole.
Kūkākūkā mākou i ka SF6 plasma etching SiNx kaʻina, me ka hoʻololi ʻana i ka mana plasma, ka lākiō kinoea o SF6/He a me ka hoʻohui ʻana i ke kinoea cationic O2, e kūkākūkā ana i kona hopena i ka etching rate o ka SiNx element protection layer o TFT, a me ka hoʻohana ʻana i ka radiation plasma. SiNx etching rate and the plasma species concentration.
Ua ʻike nā haʻawina i ka wā e hoʻonui ʻia ai ka mana plasma, piʻi ka nui o ka etching; inā hoʻonui ʻia ka kahe kahe o SF6 i loko o ka plasma, piʻi ka F atom ka hoʻonui ʻia a hoʻopili maikaʻi ʻia me ka helu etching. Eia kekahi, ma hope o ka hoʻohui ʻana i ke kinoea cationic O2 ma lalo o ka huina kahe holo paʻa, e loaʻa iā ia ka hopena o ka hoʻonui ʻana i ka helu etching, akā ma lalo o nā ʻano kahe kahe O2 / SF6 ʻē aʻe, e ʻokoʻa nā ʻano hana like ʻole, hiki ke hoʻokaʻawale ʻia i ʻekolu mau ʻāpana: (1) He liʻiliʻi loa ka lakene kahe O2 / SF6, hiki iā O2 ke kōkua i ka dissociation o SF6, a ʻaʻole i ʻoi aku ka nui o ka etching i kēia manawa. (2) Ke oi aku ka laiki kahe O2/SF6 ma mua o 0.2 a hiki i ka manawa e kokoke ana i ka 1, i keia manawa, no ka nui o ka dissociation o SF6 e hana i F atoms, o ka etching rate ka mea kiekie loa; akā i ka manawa like, ke piʻi aʻe nei nā ʻātoma O i loko o ka plasma a ua maʻalahi ka hana ʻana i SiOx a i ʻole SiNxO(yx) me ka ʻili kiʻi SiNx, a ʻoi aku ka nui o nā ʻātoma O, ʻoi aku ka paʻakikī o nā ʻātoma F no ka hopena etching. No laila, hoʻomaka ka lohi o ka etching i ka wā e kokoke ana ka lākiō O2/SF6 i ka 1. (3) Ke ʻoi aku ka nui o ka lākiō O2/SF6 ma mua o 1, e emi ana ka helu etching. Ma muli o ka piʻi nui ʻana o ka O2, ua hui pū nā ʻātoma F i hoʻokaʻawale ʻia me ka O2 a me ke ʻano o OF, kahi e hoʻemi ai i ka ʻike ʻana o nā mana F, e hopena i ka emi ʻana o ka helu etching. Hiki ke ʻike ʻia mai kēia, ke hoʻohui ʻia ʻo O2, ʻo ka ratio kahe o O2/SF6 ma waena o 0.2 a me 0.8, a hiki ke loaʻa ka helu etching maikaʻi loa.
Ka manawa hoʻouna: Dec-06-2021
